AON1634 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 4a r ds(on) (at v gs =10v) < 54m w r ds(on) (at v gs =4.5v) < 62m w r ds(on) (at v gs =2.5v) < 82m w typical esd protection hbm class 3a symbol v ds the AON1634 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 pin 1 pin 1 d g s s dfn 1.6x1.6a top view bottom view g d s v ds v gs i dm t j , t stg symbol t 10s steady-state c/w maximum junction-to-ambient a d 110 c thermal characteristics units maximum junction-to-ambient a c/w r q ja 56 88 70 parameter typ max w v drain-source voltage 30 t a =25c v 43 t a =25c t a =70c 12 gate-source voltage a continuous drain current g i d t a =70c 1.15 1.8 junction and storage temperature range 16 pulsed drain current c -55 to 150 power dissipation a p d rev 1 : sep. 2012 www.aosmd.com page 1 of 5
AON1634 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.7 1.05 1.5 v i d(on) 16 a 43.5 54 t j =125c 68 84 48 62 m w 62 82 m w g fs 15 s v sd 0.75 1 v i s 2.5 a c iss 245 pf c oss 35 pf c rss 20 pf r g 5.3 w q g (10v) 5.7 10 nc q g (4.5v) 2.6 5 nc q gs 0.5 nc q gd 1 nc t d(on) 2 ns t r 3.5 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage r ds(on) static drain-source on-resistance i dss reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters m w on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =4a m a v ds =v gs , i d =250 m a v ds =0v, v gs =10v gate resistance v gs =0v, v ds =0v, f=1mhz v gs =10v, v ds =15v, i d =4a zero gate voltage drain current gate-body leakage current v ds =5v, i d =4a forward transconductance v gs =4.5v, i d =3a v gs =2.5v, i d =2a total gate charge i s =1a,v gs =0v turn-on rise time gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters diode forward voltage v gs =10v, v ds =15v, r l =3.75 w , t r 3.5 ns t d(off) 22 ns t f 3.5 ns t rr 6.5 ns q rr 7.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =4a, di/dt=500a/ m s turn-off fall time body diode reverse recovery charge i f =4a, di/dt=500a/ m s turn-off delaytime turn-on rise time v gs =10v, v ds =15v, r l =3.75 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperat ure of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 1 : sep. 2012 www.aosmd.com page 2 of 5
AON1634 typical electrical and thermal characteristics 0 5 10 15 20 0 1 2 3 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) v gs =2.5v 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =2.5v i d =2a v gs =4.5v i d =3a v gs =10v i d =4a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.0v 2.5v 10v 4.5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 120 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =4a 25 c 125 c rev 1 : sep. 2012 www.aosmd.com page 3 of 5
AON1634 typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.00001 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note h) c oss c rss v ds =15v i d =4a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 100ms 1s ambient (note h) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q ja =110 c/w rev 1 : sep. 2012 www.aosmd.com page 4 of 5
AON1634 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c l v ds isd isd v ds - i f di/dt i r m v dd v dd t rr rev 1 : sep. 2012 www.aosmd.com page 5 of 5
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